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5-V Low-Drop Voltage Regulator
TLE 4265
Bipolar IC
Features
q q q q q q q q q
Output voltage tolerance 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof Setable reset threshold Wide temperature range Suitable for use in automotive electronics
P-TO220-5-1
Type TLE 4265 TLE 4265S
Ordering Code Q67000-A9138 Q67000-A9277
Package P-TO220-5-1 P-TO220-5-2 P-TO220-5-2
Functional Description
TLE 4265 is a 5-V low-drop voltage regulator in a TO220-5 package. Maximum input voltage is 45 V. It can produce an output current of > 200 mA. The IC is shortcircuit-proof and thermal protected. Application The IC regulates an input voltage VI in the range 6 V < VI < 45 V to VQrated = 5.0 V. A reset signal is generated for an output voltage VQ of < 4.5 V. The reset delay can be set with an external capacitor. This voltage regulator is especially suitable for microprocessor applications in automobiles.
Semiconductor Group
1
1998-11-01
TLE 4265
Pin Configuration (top view)
P-TO220-5-1
P-TO220-5-2
1
2
3
4
5
V
GND VQ QRES DRES
AEP01492
Pin Definitions and Functions Pin 1 2 3 4 5 Symbol Function Input voltage; block direct on IC with ceramic capacitor to GND Reset output; open-collector output connected to output across resistor of 30 k Ground Reset delay; wire with capacitor to GND for setting delay 5-V output voltage; block to GND with 22-F capacitor
VI
QRES GND DRES
VQ
Semiconductor Group
2
1998-11-01
TLE 4265
Circuit Description The control amplifier compares a highly precise reference voltage, produced by resistor alignment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. A saturation control, a function of the load current, prevents any over-saturating of the power element. If the output voltage drops below 4.5 V, the external reset-delay capacitor is discharged by the reset generator. If the voltage on the capacitor reaches the lower threshold VST, a signal is triggered on the reset output and not canceled again until the upper threshold VdT is exceeded. The IC is protected against overload, overtemperature and reverse polarity.
Temperature Sensor In- 1 put Control Amplifier Adjustment Bandgap Reference + Buffer
Saturation Control and Protection 5 Output
Reset Generator
4 Reset Delay 2 Reset Output
3 GND
AEB01493
Semiconductor Group
3
1998-11-01
TLE 4265
Block Diagram Absolute Maximum Ratings TJ = - 40 to 150 C Parameter Symbol Limit Values min. Input Input voltage Reset Output Voltage Reset Delay Voltage Output Output voltage Output current GND Current Temperatures Junction temperature Storage temperature Operating Range Input voltage Junction temperature max. Unit Notes
VI
- 42
45
V
-
VR
- 0.3
42
V
-
Vd
- 0.3
42
V
-
VQ IQ
- 0.3 -
7 -
V -
- Limited internally
IGND
- 0.1
-
A
-
TJ Tstg
- - 50
150 150
C C
- -
VI TJ
- - 40
45 150
V C
- -
Semiconductor Group
4
1998-11-01
TLE 4265
Absolute Maximum Ratings (cont'd) TJ = - 40 to 150 C Parameter Symbol Limit Values min. Thermal Resistance Junction ambient Junction-case max. Unit Notes
Rthja Rthjc
- -
70 10
K/W - K/W -
Optimum reliability and lifetime can be ensured in integrated circuits by not exceeding a junction temperature of 125 C during operation. Although operation up to the maximum permissible junction temperature of 150 C is possible, such boundary conditions, if sustained, may affect device reliability. Characteristics VI = 13.5 V; TJ = 25 C (unless specified otherwise) Parameter Symbol Limit Values min. Output voltage typ. 5 max. 5.1 V 5 mA IQ 150 mA 6 V VI 28 V - 40 C TJ 125 C - Unit Test Condition
VQ
4.9
Output-current limiting Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Drop voltage Load regulation
IQ Iq Iq Iq VDr
VQ
200 - - - - -
250 750 10 15 0.35 -
- 1000 15 20 0.5 25
mA A mA mA V mV
IQ = 0 mA IQ = 150 mA IQ = 150 mA VI = 4.5 V IQ = 150 mA1) IQ = 5 to 150 mA
Semiconductor Group
5
1998-11-01
TLE 4265
Characteristics (cont'd) VI = 13.5 V; TJ = 25 C (unless specified otherwise) Parameter Symbol Limit Values min. Line regulation VQ - - typ. 15 54 max. 25 - mV dB Unit Test Condition
VI = 6 to 28 V IQ = 150 mA fr = 100 Hz Vr = 0.5 Vpp
Supply-voltage rejection SVR
Reset Generator Switching threshold Saturation voltage Saturation voltage Charge current Delay switching threshold Delay Delay
VRT VR VC Ich Vdt td tt
4.2 - - 7 1.5 - -
4.5 0.1 50 10 1.8 18 2
4.8 0.4 100 14 2.1 - -
V V mV A V ms s
-
IR = 1 mA VQ < VRT
- -
Cd = 100 nF Cd = 100 nF
1) Drop voltage = VI - VQ (measured at point where VQ is 100 mV smaller than at VI = 13.5 V)
Semiconductor Group
6
1998-11-01
TLE 4265
1000 F 470 nF
1
5
Q
22 F
TLE 4265
2 4 ch 3 GND
5.6 k
R
VQ VR
V
VC
CD
AES01494
Test Circuit
Input 6V to 45 V 470 nF Reset To MC
1
5
Output
2
TLE 4265
4 100 nF
22 F
3
AES01495
Application Circuit
Semiconductor Group
7
1998-11-01
TLE 4265
Drop Voltage versus Output Current
700
AED01496
Current Consumption versus Output Current
28
AED01497
VDr
mV 500 400 300
q
mA 20 16 12
T j = 25 C
200 100 0
V = 13.5 V
8 4 0
0
50
100
150
200
mA
300
Q
0
50
100
150
200
mA
300
Q
Current Consumption versus Input Voltage
30
AED01498
Output Voltage versus Input Voltage
12
AED01499
q
mA
RL = 25
VQ
V
RL = 25
20
8
15
6
10
4
5
2
0
0
0
10
20
30
V
50
0
2
4
6
V
10
V
V
Semiconductor Group
8
1998-11-01
TLE 4265
Charge Current versus Temperature
14
AED01500
Switching Voltage VdT and VST versus Temperature
3.2
AED01501
ch
A
VdT
V
ch
10 8 6
V = 13.5 V
2.4
V = 13.5 V VC = 1.5 V
2.0
VdT
1.6 1.2
4 2
0.8 0.4 0 -40
-40
0
40
80
C
160
0
40
80
C
160
Tj
Tj
Output Voltage versus Temperature
AED01502
Output Voltage versus Input Voltage
300
AED01503
5.10
VQ
V 5.00
V = 13.5 V
Q mA
250
T j = 25 C
200
4.90
150
100
4.80
50
4.70 -40
0
40
80
C
160
0
0
10
20
30
40
50
Tj
Vj
Semiconductor Group
9
1998-11-01
TLE 4265
Package Outlines P-TO220-5-1 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75
+0.1
4.6 -0.2
1x45
1.27
+0.1
2.8
19.5 max 16 0.4
8.8 -0.2
2.6 4.5 0.4 8.4 0.4
1 1.7
5 0.8 +0.1 1)
0.4 +0.1
0.6 M 5x
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information".
Dimensions in mm
Semiconductor Group
10
1998-11-01
GPT05107
1) 1-0.15 at dam bar (max 1.8 from body) 1) 1-0.15 im Dichtstegbereich (max 1.8 vom Korper)
8.6 0.3 10.2 0.3
15.4 0.3
TLE 4265
P-TO220-5-2 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75 +0.1 1.27
+0.1
4.6 -0.2
1x45
2.8
10.9 0.2
1 1.7
5
12.9 0.2
0.4 +0.1 0.8 +0.1 1)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information".
Dimensions in mm
Semiconductor Group
11
1998-11-01
GPT05256
2.6 0.15 0.6 M 5x 1) 1-0.15 at dam bar (max 1.8 from body) 1) 1-0.15 im Dichtstegbereich (max 1.8 vom Korper)
8.8 -0.2
15.4 0.3

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